isc Silicon NPN Power Transistor
3DD5E
DESCRIPTION ·Excellent safe operating area ·Low Collector-Emitter Saturation Vo...
isc Silicon NPN Power Transistor
3DD5E
DESCRIPTION ·Excellent safe operating area ·Low Collector-Emitter Saturation
Voltage ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general purpose switching and amplifier
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
350
V
VCEO
Collector-Emitter
Voltage
250
V
VEBO
Emitter-Base
Voltage
5
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @ TC=75℃
TJ
Junction Temperature
3
A
30
W
150
℃
Tstg
Storage Temperature Range
-55~175
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT 1.52 ℃/W
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isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown
Voltage IC= 3mA; IB= 0
V(BR)EBO Emitter-Base Breakdown
Voltage
IE= 1mA; IC= 0
V(BR)CBO Collector-Base Breakdown
Voltage
IC= 3mA; IE= 0
VCE(sat) Collector-Emitter Saturation
Voltage IC= 1.5A; IB= 0.15A
VBE(sat) Base-Emitter Saturation
Voltage
IC= 1.5A; IB= 0.15A
ICBO
Collector Cutoff Current
VCB= 350V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 1.5A; VCE= 10V
3DD5E
MIN TYP. MAX UNIT
250
V
5
V
350
V
1
V
1
V
0.1 mA
0.1 mA
15
180
NOTICE: ISC reserves the ...