3N155

3N155 3N156 CASE 20-03, STYLE 2 TO-72 (TO-206AF) MOSFET SWITCHING P-CHANNEL — ENHANCEMENT Refer to 3N157 for graphs. MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Drain Current @Total Device Dissipation Ta = 25°C Derate above 25°C Junction Temperature Range Storage Channel Temperature Range Symbol vDs vdg Vgs id pd Tj T Stfl Value ±35 ±50 ±50 30 300 2.0 -65 to +175 -65 to +175 Unit Vdc Vdc Vdc mAdc mW mW/X °C °c ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage (Id = -10 /uAdc, Vq = Vs = 0) Zero-Gate-Voltage Drain Current (Vds = -10 Vdc, Vqs = °> (Vqs = -10 Vdc, Vqs = 0, Ta = 125°C) Gate Reverse Current (Vqs = +50 Vdc, Vqs = 0) (Vqs = +25Vdc, V DS = 0) Resistance Drain Source (Irj = 0, Vqs = 0) Resistance Gate Source Input (Vqs = -25 Vdc) Gate Forward Leakage Current ON CHARACTERISTICS (Vqs = -50 Vdc, Vqs = 0) (VGS = -25 Vdc, VDS = 0) Gate Thres...