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3N166 Datasheet

Part Number 3N166
Manufacturers Calogic LLC
Logo Calogic  LLC
Description Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier
Datasheet 3N166 Datasheet3N166 Datasheet (PDF)

Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier 3N165 / 3N166 FEATURES CORPORATION • Very High Impedance • High Gate Breakdown • Low Capacitance PIN CONFIGURATION ABSOLUTE MAXIMUM RATINGS (Note 1) (TA = 25oC unless otherwise specified) Drain-Source or Drain-Gate Voltage (Note 2) 3N165. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V 3N166. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Transient Gate-.

  3N166   3N166






Part Number 3N166
Manufacturers Linear Integrated Systems
Logo Linear Integrated Systems
Description MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet 3N166 Datasheet3N166 Datasheet (PDF)

3N165, 3N166 MONOLITHIC DUAL P-CHANNEL Linear Integrated Systems FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS (NOTE 1) (TA= 25°C unless otherwise noted) Drain-Source or Drain-Gate Voltage (NOTE 2) 3N165 3N166 Transient G-S Voltage (NOTE 3) Gate-Gate Voltage Drain Current (NOTE 2) Storage Temperature Operating Temperature Lead Temperature (Soldering, 10 sec.) Power Dissipation (One Side) Total Derating above 25°C 40 V 30 V ±125.

  3N166   3N166







Part Number 3N166
Manufacturers Micross
Logo Micross
Description Amplifier
Datasheet 3N166 Datasheet3N166 Datasheet (PDF)

3N166 P-CHANNEL MOSFET The 3N166 is a monolithic dual enhancement mode P-Channel Mosfet FEATURES  DIRECT REPLACEMENT FOR INTERSIL 3N166  ABSOLUTE MAXIMUM RATINGS1@ 25°C (unless otherwise noted)  Maximum Temperatures  The hermetically sealed TO-78 package is well suited Storage Temperature  ‐65°C to +200°C  for high reliability and harsh environment applications. Operating Junction Temperature  ‐55°C to +150°C  Lead Temperature (Soldering, 10 sec.)  +300°C  (See Packaging Information). Maximum P.

  3N166   3N166







Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier

Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier 3N165 / 3N166 FEATURES CORPORATION • Very High Impedance • High Gate Breakdown • Low Capacitance PIN CONFIGURATION ABSOLUTE MAXIMUM RATINGS (Note 1) (TA = 25oC unless otherwise specified) Drain-Source or Drain-Gate Voltage (Note 2) 3N165. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V 3N166. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Transient Gate-Source Voltage (Note 3) . . . . . . . . . . . . . ±125 Gate-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±80V Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Storage Temperature . . . . . . . . . . . . . . . . . . . -65oC to +200oC Operating Temperature . . . . . . . . . . . . . . . . . -55oC to +150oC Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC Power Dissipation One Side . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW Both Sides . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 525mW Total Derating above 25oC. . . . . . . . . . . . . . . . . . 4.2mW/ oC NOTE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absol.


2005-03-30 : M27C320    M27C322    M27C400    M27C405    M27C512    2SD600    2SD600K    2SD601A    2SD602    2SD602A   


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