3SK131

DATA SHEET SHEET DATA MOS FIELD EFFECT TRANSISTOR 3SK131 RF AMP. FOR VHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD FEATURES Suitable for use as RF amplifier in VHF TV tuner. Low Crss : 0.05 pF TYP. High Gps : 23 dB TYP. Low NF : 1.3 dB TYP. PACKAGE DIMENSIONS (Unit: mm) 0.4 −0.05 0.4 −0.05 0.4 −0.05 0.16 −0.06 +0.1 2.8 −0.3 1.5 2 +0.2 +0.1 +0.1 +0.2 −0.1 Drain to Source Voltage Gate1 to Source Voltage Gate2 to Source Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature VDSX VG1S VG2S ID PT Tch Tstg 20 V V V mA mW 0.6 −0.05 +0.1 25 200 125 5° 5° 5° 0 to 0.1 55 to +125 C C +0.2 −3.1 1.1 0.8 5° ELECTRICAL CHARACTERISTICS (TA = 25
C) CHARACTERISTIC Drain to Source Breakdown Voltage Drain Current Gate1 to Source Cutoff Voltage Gate2 to Source Cutoff Voltage Gate1 Reverse Current Gate2 Reverse Current Forward Transfer Admittance SYMBOL BVDSX IDSS VG1S(OFF) VG2S(OFF) IG1SS IG2SS MIN. 20 7 10 25 TYP. MAX. UNIT V mA V V nA nA mS PIN CONNECTIONS 1. Source 2. Drain 3. Gate 2 4. Gate 1 TEST CONDITIONS VG1S = VG2S =
2 V, ID = 10
A VDS = 6 V, VG2S = 3 V, VG1S = 0 VDS = 8 V, VG2S = 0, ID = 5
A VDS = 8 V VG1S = 0, ID = 5
A VDS = 0, VG1S = 8 V, VG2S = 0 VDS = 0, VG2S = 8 V, VG1S = 0 VDS = 6 V, VG2S = 3 V, ID = 10 mA f = 1 kHz
2.0
1.5 20 20 22 28 yfs Input Capacitance Output Capacitance Reverse Transfer Capacitance Power Gain Noise Figure Ciss Coss Crss Cps NF 4.0 2.2...