www.DataSheet4U.com
APT40GP60J
600V
POWER MOS 7® IGBT
The POWER MOS 7® IGBT is a new generation of high voltage powe...
www.DataSheet4U.com
APT40GP60J
600V
POWER MOS 7® IGBT
The POWER MOS 7® IGBT is a new generation of high
voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high
voltage switching applications and has been optimized for high frequency switchmode power supplies.
Low Conduction Loss Low Gate Charge Ultrafast Tail Current shutoff
100 kHz operation @ 400V, 25A 200 kHz operation @ 400V, 16A SSOA rated
EE
G C SOT-227
ISOTOP®
C"UL Recognized"
G
E
MAXIMUM RATINGS Symbol Parameter
All Ratings: TC = 25°C unless otherwise specified.
APT40GP60J
UNIT
VCES VGE VGEM I C1 I C2 I CM SSOA PD TJ,TSTG TL
Collector-Emitter
Voltage Gate-Emitter
Voltage
Gate-Emitter
Voltage Transient
Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 110°C Pulsed Collector Current 1 @ TC = 25°C Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range ...
