Taiwan Goodark Technology Co.,Ltd
TGD40H12K
TGD N-Channel Enhancement Mode Power MOSFET
Description
The TGD40H12K uses a...
Taiwan Goodark Technology Co.,Ltd
TGD40H12K
TGD N-Channel Enhancement Mode Power
MOSFET
Description
The TGD40H12K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS =40V,ID =120A RDS(ON) <4.0mΩ @ VGS=10V RDS(ON) <7mΩ @ VGS=4.5V
● High density cell design for ultra low Rdson ● Fully characterized avalanche
voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability
Schematic diagram
Application
● Load switching ● Hard switched and high frequency circuits ● Uninterruptible power supply
pin assignment
100% UIS TESTED! 100% ∆Vds TESTED!
TO-252-2L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
40H12K
40H12K
TO-252-2L
Reel Size -
Tape width -
Quantity -
Absolute Maximum Ratings (TC=25℃unless o...