SGT40N60NPFDPN_Datasheet
40A, 600V FIELD STOP IGBT
DESCRIPTION
SGT40N60NPFDPN using Field Stop IGBT technology, offer th...
SGT40N60NPFDPN_Datasheet
40A, 600V FIELD STOP IGBT
DESCRIPTION
SGT40N60NPFDPN using Field Stop IGBT technology, offer the optimum performance for induction Heating, UPS, SMPS and PFC application.
FEATURES
40A, 600V, VCE(sat)(typ.)=1.8V@IC=40A Low conduction loss Fast switching High input impedance
NOMENCLATURE
ORDERING INFORMATION
Part No. SGT40N60NPFDPN
Package TO-3P
Marking 40N60NPFD
Hazardous Substance Control Pb free
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Parameter
Collector to Emitter
Voltage
Gate to Emitter
Voltage
Collector Current
TC=25°C TC=100°C
Pulsed Collector Current
Maximum Power Dissipation (TC=25C)
Operating Junction Temperature Storage Temperature Range
Symbol VCE VGE
IC
ICM PD TJ Tstg
Ratings 600 ±20
80 40 120 290 2.32 -55~+175 -55~+175
Packing Tube
Units V V A A W
W/C C C
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.3 Page 1 of 6
SGT40N60NPFDPN_Datasheet
THERMAL CHARACTERISTICS
Parameter Thermal Resistance, Junction to Case (IGBT) Thermal Resistance, Junction to Case (FRD) Thermal Resistance, Junction to Ambient
Symbol RθJC RθJC RθJA
Ratings 0.24 1.4 35.5
ELECTRICAL CHARACTERISTICS OF IGBT (TC = 25°C unless otherwise noted)
Parameter Collector to Emitter Breakdown
Voltage C-E Leakage Current G-E Leakage Current G-E Threshold
Voltage Collector to Emitter Saturation
Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off ...