AP40T03GH/J
RoHS-compliant Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Low Gate Charge ▼ Fast...
AP40T03GH/J
RoHS-compliant Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Low Gate Charge ▼ Fast Switching G S D
N-CHANNEL ENHANCEMENT MODE POWER
MOSFET
BVDSS RDS(ON) ID
30V 25mΩ 28A
Description
Advanced Power
MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low
voltage applications such as DC/DC converters. The through-hole version (AP40T03GJ) are available for low-profile applications.
GD S
TO-252(H)
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
1
Rating 30 +25 28 24 95 31.25 0.25 -55 to 150 -55 to 150
Units V V A A A W W/℃ ℃ ℃
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
Value 4 62.5 110
Units ℃/W ℃/W ℃/W
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
1 200811034
Free Datasheet http://www.datasheet4u.com/
AP40T03GH/J
Electrical Characteristics@Tj=25oC(unless ...
