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4126

UTC

HIGH FREQUENCY SWITCHING TRANSISTORS

UNISONIC TECHNOLOGIES CO., 4126 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY SWITCHING TRANSISTORS FOR BALLASTERS ...


UTC

4126

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UNISONIC TECHNOLOGIES CO., 4126 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY SWITCHING TRANSISTORS FOR BALLASTERS . DESCRIPTION UTC 4126 is designed for specially used for electronic ballasters in 110VAC environment. 1 FEATURES * Triple diffused technology. * High switching speed TO-126 *Pb-free plating product number: 4126L PIN CONFIGURATION PIN NO. PIN NAME 1 Base 2 Collector 3 Emitter www.DataSheet4U.com ORDERING INFORMATION Order Number Normal Lead free 4126-T60-T 4126L-T60-T Package TO-126 Packing Tube www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co.,LTD 1 QW-R204-021,B 4126 PARAMETER Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Peak Collector Current Peak Collector Consume Dissipation Peak Junction Temperature Storage Temperature NPN EPITAXIAL SILICON TRANSISTOR ABSOLUATE MAXIUM RATINGS (Tc = 25℃) SYMBOL VCBO VCEO VEBO IC PD TJ TSTG RATINGS 400 200 7 3 40 150 -40 ~ +150 UNIT V V V A W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified) PARAMETER Collector-Emitter Maintenance Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Collector-Emitter Cutoff Current Emitter-Base Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Fall Time Storage Time Feature Frequency SYMBOL VCEO (SUS) V (BR) CBO V (BR) EBO ICBO ICEO IEBO hFE (1) hFE (2) VCE (sat) VBE (sat) tf ts fT TEST CONDITIONS IC=10mA, IB=0 IC=1mA...




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