UNISONIC TECHNOLOGIES CO.,
4126
NPN EPITAXIAL SILICON TRANSISTOR
HIGH FREQUENCY SWITCHING TRANSISTORS FOR BALLASTERS
...
UNISONIC TECHNOLOGIES CO.,
4126
NPN EPITAXIAL SILICON TRANSISTOR
HIGH FREQUENCY SWITCHING TRANSISTORS FOR BALLASTERS
.
DESCRIPTION
UTC 4126 is designed for specially used for electronic ballasters in 110VAC environment.
1
FEATURES
* Triple diffused technology. * High switching speed
TO-126
*Pb-free plating product number: 4126L
PIN CONFIGURATION
PIN NO. PIN NAME 1 Base 2 Collector 3 Emitter
www.DataSheet4U.com
ORDERING INFORMATION Order Number Normal Lead free 4126-T60-T 4126L-T60-T Package TO-126 Packing Tube
www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co.,LTD
1
QW-R204-021,B
4126
PARAMETER Collector-Base
Voltage Collector-Emitter
Voltage Collector-Emitter
Voltage Peak Collector Current Peak Collector Consume Dissipation Peak Junction Temperature Storage Temperature
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUATE MAXIUM RATINGS (Tc = 25℃)
SYMBOL VCBO VCEO VEBO IC PD TJ TSTG RATINGS 400 200 7 3 40 150 -40 ~ +150 UNIT V V V A W ℃ ℃
ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified)
PARAMETER Collector-Emitter Maintenance
Voltage Collector-Base Breakdown
Voltage Emitter-Base Breakdown
Voltage Collector-Base Cutoff Current Collector-Emitter Cutoff Current Emitter-Base Cutoff Current DC Current Gain Collector-Emitter Saturation
Voltage Base-Emitter Saturation
Voltage Fall Time Storage Time Feature Frequency SYMBOL VCEO (SUS) V (BR) CBO V (BR) EBO ICBO ICEO IEBO hFE (1) hFE (2) VCE (sat) VBE (sat) tf ts fT TEST CONDITIONS IC=10mA, IB=0 IC=1mA...