UTC 4128
HIGH FREQUENCY SWITCHING TRANSISTORS FOR BALLASTERS
DESCRIPTION
NPN EPITAXIAL SILICON TRANSISTOR
UTC 4128 is ...
UTC 4128
HIGH FREQUENCY SWITCHING TRANSISTORS FOR BALLASTERS
DESCRIPTION
NPN EPITAXIAL SILICON TRANSISTOR
UTC 4128 is designed for specially used for electronic ballasters in 110VAC environment.
FEATURES
* Triple diffused technology. * High switching speed
1
TO-126
1: BASE 2: COLLECTOR 3: EMITTER *Pb-free plating product number: 4128L
ABSOLUTE MAXIMUM RATINGS
(Tc = 25℃) PARAMETER Collector-Base
Voltage Collector-Emitter
Voltage Collector-Emitter
Voltage Peak Collector Current Peak Collector Consume Dissipation Peak Junction Temperature Storage Temperature SYMBOL VCBO VCEO www.DataSheet4U.com VEBO IC PC TJ TSTG RATINGS 400 200 7 5 40 150 -40 ~ +150 UNIT V V V A W ℃ ℃
ELECTRICAL CHARACTERISTICS
(Ta = 25℃) PARAMETER Collector-Emitter Maintenance
Voltage Collector-Base Breakdown
Voltage Emitter-Base Breakdown
Voltage Collector-Base Cutoff Current Collector-Emitter Cutoff Current Emitter-Base Cutoff Current DC Current Gain Collector-Emitter Saturation
Voltage Base-Emitter Saturation
Voltage Fall Time Storage Time Feature Frequency SYMBOL VCEO (SUS) V (BR) CBO V (BR) EBO ICBO ICEO IEBO hFE (1) hFE (2) VCE (sat) VBE (sat) tf ts fT TEST CONDITIONS IC=10mA, IB=0 IC=1mA, IB=0 IE=1mA, IC=0 VCB=400V, IE=0 VCE=200V, IB=0 VEB=7V, Ic=0 VCE=10V, Ic=0.5A VCE=5V, Ic=2A IC=1A, IB=0.2A IC=4A, IB=1A IC=2A, IB=0.5A IC=2A, IB1= -IB2 = 0.4A IC=2A, IB1= -IB2 = 0.4A VCE=10V, Ic=0.5A MIN 200 400 7 TYP MAX UNIT V V V µA µA µA
10 10
100 100 100 60 40 0.8 2 1.6 0.9 4
4
V V V µs µs MHz 1
QW-R204...