File No. 776 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
DDJIDLJD
Solid State Division
Power Tran...
File No. 776 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
DDJIDLJD
Solid State Division
Power Transistors 41506
High-
Voltage, High-Power Silicon N-P-N Power Transistor
For Switching and Linear Applications
JEOEC TO-3
Features:
Maximum safe-area-of-operation curves a Low saturation
voltage: VCE(satl ~ 1.5 V (max.) .. High
voltage rating: VCEO(SUS) ~ 200 V High dissipation rating: PT ~ 100 W
The RCA-41506 is an epitaxial silicon n-p-n power transistor utilizing a multiple-emitter- site structure. This device employs the popular JEDEC TO-3 package. The 41506 features high breakdown-
voltage ratings and low
saturation-
voltage values and is especially suitable for use in inverters, switching regulators, high-
voltage bridge
amplifiers, and other high-
voltage switching applications_
MAXIMUM RATINGS, Absolute-Maximum Values:
COLLECTOR-TO-BASE
VOLTAGE _ _ _ _ _ _ _
COLLECTOR-TO-EMITTER SUSTAINING
VOLTAGE: With base open.
EMITTER-TO-...