IXFN44N60. 44N60 Datasheet

44N60 Datasheet PDF

Part 44N60
Description IXFN44N60
Feature 44N60; HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, L.
Manufacture IXYS Corporation
Datasheet
Download 44N60 Datasheet




44N60
HiPerFETTM
Power MOSFETs
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
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VDSS
VDGR
V
GS
VGSM
ID25
I
DM
I
AR
EAR
EAS
dv/dt
P
D
TJ
TJM
Tstg
TJ
VISOL
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
Continuous
Transient
TC = 25°C
T
C
=
25°C,
pulse
width
limited
by
T
JM
T
C
= 25°C
TC = 25°C
TC = 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS,
TJ £ 150°C, RG = 2 W
T
C
= 25°C
1.6 mm (0.63 in) from case for 10 s
50/60 Hz, RMS t = 1 min
I
ISOL
£
1
mA
t=1s
Mounting torque
Terminal connection torque
IXFN 44N60
D
G
S
S
Maximum Ratings
600 V
600 V
±20 V
±30 V
44 A
176 A
44 A
60 mJ
3J
5 V/ns
600
-55 ... +150
150
-55 ... +150
W
°C
°C
°C
- °C
2500
3000
V~
V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30 g
Symbol
VDSS
VGH(th)
I
GSS
IDSS
RDS(on)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 3 mA
VDS = VGS, ID = 8 mA
V
GS
=
±20
V,
DC
V
DS
=
0
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
VGS = 10 V, ID = 0.5 • ID25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
600
2.5
V
4.5 V
±100 nA
100 mA
2 mA
130 mW
VDSS =
ID25 =
=RDS(on)
600 V
44 A
130 mW
trr £ 250 ns
miniBLOC, SOT-227 B
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
International standard package
miniBLOC, with Aluminium nitride
isolation
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Advantages
Easy to mount
Space savings
High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98610B (7/00)
1-4



44N60
IXFN 44N60
Symbol
gfs
Ciss
Coss
Crss
td(on)
tr
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tf
Qg(on)
Qgs
Qgd
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDS = 10 V; ID = 0.5 • ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
30
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1 W (External),
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
45 S
8900
1000
330
pF
pF
pF
42 ns
55 ns
110 ns
45 ns
330 nC
60 nC
65 nC
0.21 K/W
0.05 K/W
Source-Drain Diode
Symbol
IS
Test Conditions
VGS = 0 V
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
44 A
ISM Repetitive;
pulse width limited by TJM
VSD IF = IS, VGS = 0 V,
Pulse test, t £ 300 ms, duty cycle d £ 2 %
trr IF = 50A, -di/dt = 100 A/ms, VR = 100 V
QRM
I
RM
176 A
1.3 V
250 ns
1.4 mC
8A
miniBLOC, SOT-227 B
M4 screws (4x) supplied
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
U
Millimeter
Min. Max.
31.50 31.88
7.80 8.20
4.09 4.29
4.09 4.29
4.09 4.29
14.91 15.11
30.12 30.30
38.00 38.23
11.68 12.22
8.92 9.60
0.76 0.84
12.60 12.85
25.15 25.42
1.98 2.13
4.95 5.97
26.54 26.90
3.94 4.42
4.72 4.85
24.59 25.07
-0.05 0.1
Inches
Min. Max.
1.240 1.255
0.307 0.323
0.161 0.169
0.161 0.169
0.161 0.169
0.587 0.595
1.186 1.193
1.496 1.505
0.460 0.481
0.351 0.378
0.030 0.033
0.496 0.506
0.990 1.001
0.078 0.084
0.195 0.235
1.045 1.059
0.155 0.174
0.186 0.191
0.968 0.987
-0.002 0.004
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-4



44N60
Figure 1. Output Characteristics at 25OC
100
TJ = 25OC
80
60
40
VGS = 10V
9V
8V
7V
6V
5V
20
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0
0 4 8 12 16 20 24
VDS - Volts
Figure 3. R normalized to 15A/25OC vs. I
DS(on)
D
2.4
VGS = 10V
2.0
TJ = 125OC
1.6
TJ = 25OC
1.2
0.8
0
20 40 60 80
ID - Amperes
100
Figure 5. Drain Current vs. Case Temperature
60
50
40
30
20
10
0
-50 -25 0 25 50 75 100 125 150
TC - Degrees C
IXFN 44N60
Figure 2. Output Characteristics at 125OC
80
TJ = 125OC
60
40
VGS = 10V
9V
8V
7V
6V
5V
20
0
0 4 8 12 16 20 24
VDS - Volts
Figure 4. R normalized to 15A/25OC vs. T
DS(on)
J
2.4
VGS = 10V
2.0
ID = 44A
1.6
ID = 22A
1.2
0.8
25
50 75 100 125
TJ - Degrees C
150
Figure 6. Admittance Curves
60
50
40 TJ = 125oC
30
20 TJ = 25oC
10
0
3.0 3.5 4.0 4.5 5.0 5.5
VGS - Volts
© 2000 IXYS All rights reserved
3-4







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