4501GM

AP4501GM www.DataSheet4U.com RoHS-compliant Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics Corp. ▼ Simple Drive Requirement D2 D2 N-CH BVDSS RDS(ON) ID G2 S1 S2 G1 30V 28mΩ 7A -30V 50mΩ -5.3A ▼ Low On-resistance ▼ Fast Switching Performance D1 D1 P-CH BVDSS RDS(ON) ID SO-8 Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. D1 D2 The SO-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. G1 S1 G2 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 30 ±20 7.0 5.8 20 2 0.016 -55 to 150 -55 to 150 P-channel -30 ±20 -5.3 -4.7 -20 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 62.5 Unit ℃/W Data and specifications subject to change without notice 1 200805264 AP4501GM www.DataSheet4U.com N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Condition...