N -channel Enhancement Mode MOSFET
DESCRIPTION
The uses advanced trench technology to provide excellen...
N -channel Enhancement Mode
MOSFET
DESCRIPTION
The uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES
RDS(ON) < Ω @ VGS=4.5V
RDS(ON) < Ω @ VGS=10V High Power and current handing capability Lead free product is acquired Surface Mount Package
Application
PWM applications Load switch Power management
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain‐Source
Voltage
VDS
Gate‐Source
Voltage Drain Current @ Continuous(Note 2)
VGS ID(25℃) ID(100℃)
Drain Current @ Current‐Pulsed (Note 1) Maximum Power Dissipation (TA=25℃)
IDM PD
Operating Junction and Storage Temperature Range
TJ,TSTG
THERMAL CHARACTERISTICS
Thermal Resistance,Junction‐to‐Ambient (Note 2)
RθJA
4515 DATASHEET 3424
S1 S2 S3 G4
8D 7D 6D 5D
Marking and pin assignment
Limit 45 +20
‐55 To 150
35
Unit V V A A A W ℃
℃/W
1
N-channel
Enhancement
Mode
MOSFET
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
4515
DATASHEET
3424
Parameter
Symbol Condition
Min Typ Max
OFF CHARACTERISTICS
Drain‐Source Breakdown
Voltage
BVDSS VGS=0V ID=250μA
45
Zero Gate
Voltage Drain Current
IDSS VDS=24V,VGS=0V
1
Gate‐Body...