Shenzhen Tuofeng Semiconductor Technology 4Co9.,5L3td
4953
Dual 30V P-Channel PowerTrench® MOSFET
General Description
...
Shenzhen Tuofeng Semiconductor Technology 4Co9.,5L3td
4953
Dual 30V P-Channel PowerTrench®
MOSFET
General Description
This P-Channel
MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive
voltage ratings (4.5V – 25V).
Applications
Power management Load switch Battery protection
Features
–5.3 A, –30 V
RDS(ON) = 59 mΩ @ VGS = –10 V RDS(ON) = 89 mΩ @ VGS = –4.5 V
Low gate charge (6nC typical)
Fast switching speed
High performance trench technology for extremely low RDS(ON)
High power and current handling capability
DD1DD22D2 DD1
SO-8
Pin 1 SO-8
S2GG2 SS1GS1 S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS V GSS ID
PD PD
Parameter
Drain-Source
Voltage Gate-Source
Voltage Drain Current – Continuous
– Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation
(Note 1a)
(Note 1a) (Note 1b)
TJ, TSTG
(Note 1c)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
4953
4953
13’’
5
6 Q1
7
Q2
8
4 3 2 1
Ratings
–30 ±20 –5.3 –20
2 1.6 1 0.9 –55 to +175
78 40
Tape width 12mm
Units
V V A
W
°C
°C/W °C/W
Quantity 2500 units
Shenzhen Tuofeng Semiconductor Technology Co., L4t9d 53
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