STFW4N150 STP4N150, STW4N150
N-channel 1500 V, 5 Ω, 4 A, PowerMESH™ Power MOSFET in TO-220, TO-247, TO-3PF
Features
Ty...
STFW4N150 STP4N150, STW4N150
N-channel 1500 V, 5 Ω, 4 A, PowerMESH™ Power
MOSFET in TO-220, TO-247, TO-3PF
Features
Type
VDSS RDS(on) max ID
Pw
STFW4N150 1500 V
<7Ω
4 A 63 W
STP4N150 1500 V
<7Ω
4 A 160 W
STW4N150 1500 V
<7Ω
4 A 160 W
■ 100% avalanche tested ■ Intrinsic capacitances and Qg minimized ■ High speed switching ■ Fully isolated TO-3PF plastic packages ■ Creepage distance path is 5.4 mm (typ.) for
TO-3PF
Application
■ Switching applications
Description
Using the well consolidated high
voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of very high
voltage Power
MOSFETs with outstanding performances. The strengthened layout coupled with the company’s proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.
Table 1. Device summary Order codes STFW4N150 STP4N150 STW4N150
Marking 4N150 P4N150 W4N150
3 2 1
TO-220
3 2 1
TO-247
3 2 1
TO-3PF
Figure 1. Internal schematic diagram.
$
'
3
!-V
Package TO-3PF TO-220 TO-247
Packaging Tube Tube Tube
July 2009
Doc ID 11262 Rev 9
1/15
www.st.com
15
Contents
Contents
STFW4N150, STP4N150, STW4N150
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . ...