4N65F

4N65(F,B,H,G,D) 4A mps,650 Volts N-CHANNEL MOSFET FEATURE  4A,650V,RDS(ON)=2.2Ω@VGS=10V/2A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB 4N65 ITO-220AB 4N65F TO-262 4N65H TO-263 4N65B TO-252 4N65G TO-251 4N65D Absolute Maximum Ratings(TC=25℃,unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(Note1) Single Pulse Avalanche Energy (Note 2) Avalanche Current(Note1) Repetitive Avalanche Energy (Note1) Reverse Diode dV/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds VDSS VGSS ID IDM EAS IAR EAR dv/dt TJ,TSTG TL Mounting Torque 6-32 or M3 screw 4N65 600 ±30 4 16 300 4 30 4.5 -55 to +150 260 10 1.1 UNIT V A mJ A mJ V/ns ℃ ℃ lbf·in N·m Thermal Characteristics Parameter Maximum Junction-to-Case Maximum Power Dissipation TC=25℃ Symbol RthJC PD ITO-220 2.2 57 TO-220 1.8 70 TO-262 TO-263 1.8 70 TO-251 TO-252 5.7 22 Units ℃/W W - - Rev. 14-1 http:// www.perfectway.cn Electrical Characteristics (Tc=25℃,unless otherwise noted) Parameter Symbol Off Characteristics Drain-Source Breakdown Voltage BVDSS Breakdown Temperature Coefficient ΔBVDSS /ΔTJ Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current,Forward IGSSF Gate-Body Leakage Current,Reverse IGSSR On Characteristics Gate-Source Threshold Voltage VGS(th) Dra...