4NM65-U2

UNISONIC TECHNOLOGIES CO., LTD 4NM65-U2 4A, 650V N-CHANNEL SUPER-JUNCTION MOSFET  DESCRIPTION The UTC 4NM65-U2 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications at power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.  FEATURES * RDS(ON) < 2.1Ω @ VGS =10V, ID = 2.0 A * Fast Switching Capability * Improved dv/dt Capability, High Ruggedness  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 4NM65L-TF1-T 4NM65G-TF1-T 4NM65L-TM3-T 4NM65G-TM3-T 4NM65L-TN3-R 4NM65G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F1 TO-251 TO-252 Pin Assignment 123 GDS GDS GDS Packing Tube Tube Tape Reel  MARKING www.unisonic.com.tw Copyright © 2017 Unisonic Technologies Co., Ltd 1 of 6 QW-R205-334.B 4NM65-U2 Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±30 V Drain Current Continuous ID 4A Pulsed (Note 2) IDM 16 A Avalanche Energy Single Pulsed (Note 3) EAS 116 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4 V/ns Power Dissipation TO-220F1 TO-251/TO-252 PD 36 W 50 W Junction Temperature TJ +150 °С Storage Temperature ...