50N02-09

SUD50N02-09P Vishay Siliconix N-Channel 20-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.0095 @ VGS = 10 V 0.017 @ VGS = 4.5 V ID (A)a 20 15 D D D D TrenchFETr Power MOSFET 175_C Junction Temperature PWM Optimized for High Efficiency 100% Rg Tested APPLICATIONS D High-Side Synchronous Buck DC/DC Conversion − Desktop − Server www.DataSheet4U.com D TO-252 Drain Connected to Tab G D S G Top View S N-Channel MOSFET Ordering Information: SUD50N02-09P SUD50N02-09P—E3 (Lead Free) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Current Continuous Source Current (Diode Conduction)a Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 0 1 mH TA = 25_C TC = 25_C TA = 25_C TC= 100_C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit 20 "20 20 14 100 4.3 29 42 6.5a 39.5 −55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction Junction-to-Ambient to Ambienta Maximum Junction-to-Case Notes a. Surface Mounted on FR4 Board, t v 10 sec. b. Limited by package Document Number: 72034 S-41168—Rev. C, 14-Jun-04 www.vishay.com t v 10 sec Steady State Symbol RthJA RthJC Typical 19 40 3.1 Maximum 23 50 3.8 Unit _C/W 1 SUD50N02-09P Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate T...