INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
53N05
·DESCRIPTION ·Drain Current ID=...
INCHANGE Semiconductor
isc N-Channel
MOSFET Transistor
isc Product Specification
53N05
·DESCRIPTION ·Drain Current ID= 53A@ TC=25℃ ·Drain Source
Voltage-
: VDSS= 50V(Min) ·Fast Switching Speed
·APPLICATIONS ·General purpose power amplifier
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
ARAMETER
VALUE UNIT
VDSS
Drain-Source
Voltage (VGS=0)
VGS Gate-Source
Voltage
ID Drain Current-continuous@ TC=25℃
50 ±30
53
V V A
ID(puls)
Pulse Drain Current
212 A
Ptot Total Dissipation@TC=25℃
150 W
Tj Max. Operating Junction Temperature 150 ℃
Tstg Storage Temperature Range
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Rth j-a
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
0.96 ℃/W 62.5 ℃/W
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn
INCHANGE Semiconductor
isc N-Channel
MOSFET Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
isc Product Specification
53N05
SYMBOL
PARAMETER
V(BR)DSS Drain-Source Breakdown
Voltage
VGS(th) Gate Threshold
Voltage VSD Diode Forward On-
Voltage
RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current
IDSS Zero Gate
Voltage Drain Current
Ciss Input Capacitance
Crss Reverse Transfer Capacitance
Coss Output Capacitance
CONDITIONS VGS= 0; ID= 250µA VDS= VGS; ID=250µA IF=4A ;VGS= 0 VGS= 10V; ID=26.5A VGS= ±20V;VDS= 0 VDS= 50V; VGS= 0
VDS=25V; VGS=0V; fT=1MHz
MIN TYPE MAX UNIT 50 V 2.0 4.0 V
1.4 V 0.025 Ω ±100 nA 250...