MCC
Features
l Through Hole Package l 150oC Junction Temperature
Pin Configuration Bottom View
ompone...
MCC
Features
l Through Hole Package l 150oC Junction Temperature
Pin Configuration Bottom View
omponents 21201 Itasca Street Chatsworth !"# $
% !"#
BC546,B BC547,A,B,C BC548,A,B,C
NPN Silicon Amplifier Transistor 625mW
C
B
E
Mechanical Data
l Case: TO-92, Molded Plastic l Polarity: indicated as above.
A
TO-92
E
B
Maximum Ratings @ 25oC Unless Otherwise Specified Charateristic Collector-Emitter
Voltage Collector-Base
Voltage BC546 BC547 BC548 BC546 BC547 BC548 Symbol Value 65 VCEO 45 30 80 VCBO 50 30 VEBO 6.0 IC Pd Pd
RqJA
Unit V V V mA mW mW/oC W mW/oC
o
D C
Emitter-Base
Voltage Collector Current(DC) Power Dissipation@TA=25oC Power Dissipation@TC=25oC Thermal Resistance, Junction to Ambient Air Thermal Resistance, Junction to Case Operating & Storage Temperature
100 625 5.0 1.5 12 200 83.3
G
DIMENSIONS
C/W C/W
o
DIM A B C D E G
RqJC
o
Tj, TSTG -55~150
C
INCHES MIN .175 .175 .500 .016 .135 .095
MAX .185 .185 --.020 .145 .105
MM MIN 4.45 4.46 12.7 0.41 3.43 2.42
MAX 4.70 4.70 --0.63 3.68 2.67
NOTE
www.mccsemi.com
BC546 thru BC548C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min
MCC
Typ Max Unit BC546 BC547 BC548 BC546 BC547 BC548 BC546 BC547 BC548 V(BR)CEO 65 45 30 80 50 30 6.0 6.0 6.0 — — — — — — — — — — — — — — — — — — V
OFF CHARACTERISTICS
Collector–Emitter Breakdown
Voltage (IC = 1.0 mA, IB = 0) Collector–Base Breakdown
Voltage (IC = 100 µAdc) E...
