55GN01NA

Ordering number : ENA1116 55GN01NA www.DataSheet4U.com SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 55GN01NA Features UHF Wide-band Low-noise Amplifier Applications High cutoff frequency : fT= 5.5GHz typ. High gain : ⏐S21e⏐2 =7dB typ (f=1GHz). =13dB typ (f=400MHz). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions Ratings 20 10 3 70 400 150 --55 to +150 Unit V V V mA mW °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance Symbol ICBO IEBO hFE fT Cob Cre VCB=10V, IE=0A VEB=2V, IC=0A VCE=5V, IC=10mA VCE=5V, IC=20mA VCB=10V, f=1MHz VCB=10V, f=1MHz 100 3.5 5.5 1.2 0.8 1.4 Conditions Ratings min typ max 0.1 1 180 GHz pF pF Unit μA μA Marking : ZD Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace...