MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTY55N20E/D
Designer's
TMOS E-FET .™ Power Field Effect...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTY55N20E/D
Designer's
TMOS E-FET .™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate
This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with fast recovery time. Designed for high
voltage, high speed switching applications in power supplies, converters, PWM motor controls, and other inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected
voltage transients. Avalanche Energy Specified Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature
D
™
Data Sheet
MTY55N20E
Motorola Preferred Device
TMOS POWER FET 55 AMPERES 200 VOLTS RDS(on) = 0.028 OHM
®
G S Symbol VDSS VDGR VGS VGSM ID IDM PD TJ, Tstg EAS RθJC RθJA TL
CASE 340G–02, STYLE 1 TO–264
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Drain–Source
Voltage Drain–Gate
Voltage (RGS = 1 MΩ) Gate–Source
Voltage — Continuous Gate–Source
Voltage — Non–Repetitive (tp ≤ 10 ms) Drain Current — Continuous @ TC = 25°C Drain Current — Single Pulse (tp ≤ 10 µs) Total Power Dissipation Derate above 25°C Operating and Storage Temperature Range Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C (VDD = 80 Vdc, VGS = 10 Vdc...