FDA59N25 250V N-Channel MOSFET
September 2005
UniFET
FDA59N25
250V N-Channel MOSFET
Features
• 59A, 250V, RDS(on) = 0....
FDA59N25 250V N-Channel
MOSFET
September 2005
UniFET
FDA59N25
250V N-Channel
MOSFET
Features
59A, 250V, RDS(on) = 0.049Ω @VGS = 10 V Low gate charge (typical 63 nC) Low Crss (typical 70 pF) Fast switching 100% avalanche tested Improved dv/dt capability
TM
VDS = 250V VDS(Avalanche) = 300V RDS(on) Typ. @10V = 41mΩ
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
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TO-3P
G DS
FDA Series
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Absolute Maximum Ratings
Symbol
VDSS VDS(Avalanche) ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source
Voltage Repetitive Avalanche
Voltage Drain Current Drain Current Gate-Source
voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C
(Note 2) (Note 1) (Note 1) (Note 3) (Note 1, 2)
Parameter
FDA59N25
250 300 59 35
(Note 1)
Unit
V V A A A V mJ A mJ V/ns W W/°C °C °C
- Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed
236 ±30 1458 59 39.2 4.5 392 3.2 -55 to +150 300
Operating and Storage Temperature Range Maximum Lead Temper...