5C6408-20

SRAM Austin Semiconductor, Inc. 8K x 8 SRAM SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS SMD 5962-38294 MIL-STD-883 www.DataSheet4U.com FEATURES MT5C6408 PIN ASSIGNMENT (Top View) A6 A7 A12 NC Vcc WE\ CE2\ 4 3 2 1 28 27 26 A5 A4 A3 A2 A1 A0 DQ0 5 6 7 8 9 10 11 25 24 23 22 21 20 19 A8 A9 A11 OE\ A10 CE1\ DQ7 28-Pin DIP (C) (300 MIL) NC A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ1 DQ2 DQ3 Vss 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 Vcc WE\ CE2 A8 A9 A11 OE\ A10 CE1\ DQ8 DQ7 DQ6 DQ5 DQ4 28-Pin LCC (EC) High Speed: 12, 15, 20, 25, 35, 45, 55, and 70ns Battery Backup: 2V data retention High-performance, low-power CMOS double-metal process Single +5V (+10%) Power Supply Easy memory expansion with CE1\ and CE2 All inputs and outputs are TTL compatible 12 13 14 15 16 17 18 28-Pin Flat Pack (F) NC A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ1 DQ2 DQ3 Vss 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 DQ6 DQ5 DQ4 DQ3 Vss DQ2 DQ1 OPTIONS Timing 12ns access 15ns access 20ns access 25ns access 35ns access 45ns access 55ns access 70ns access Package(s) Ceramic DIP (300 mil) Ceramic LCC Ceramic Flatpack MARKING -12 -15 -20 -25 -35 -45 -55* -70* Vcc WE\ CE2 A8 A9 A11 OE\ A10 CE1\ DQ8 DQ7 DQ6 DQ5 DQ4 GENERAL DESCRIPTION No. 108 No. 204 No. 302 The MT5C6408, 8K x 8 SRAM, employs high-speed, low-power CMOS technology, eliminating the need for clocks or refreshing. These SRAM’s have equal access and cycle times. For fle...