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5DL2C48A

Toshiba Semiconductor

SILICON EPITAXIAL TYPE HIGH EFFICIENCY DIODE STACK

5DL2C48A,5FL2C48A,U5DL2C48A,U5FL2C48A TOSHIBA HighEfficiencyDiodeStack (HED) Silicon Epitaxial Type 5DL2C48A, 5FL2C48A, ...


Toshiba Semiconductor

5DL2C48A

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Description
5DL2C48A,5FL2C48A,U5DL2C48A,U5FL2C48A TOSHIBA HighEfficiencyDiodeStack (HED) Silicon Epitaxial Type 5DL2C48A, 5FL2C48A, U5DL2C48A, U5FL2C48A Switching Mode Power Supply Application Converter & Chopper Application · Repetitive peak reverse voltage: VDRM = 200, 300 V · Average output rectified current: IO = 5 A · Ultra fast reverse-recovery time: trr = 35 ns (Max) · Low switching losses and output noise Maximum Ratings (Ta = 25°C) Characteristics 5DL2C48A Repetitive peak Repetitive voltage U5DL2C48A 5FL2C48A U5FL2C48A Average output rectified current Peak one cycle surge forward current Junction temperature Storage temperature range Symbol VRRM IO IFSM Tj Tstg Rating 200 300 5 25 (50 Hz) 27.5 (60 Hz) -40~150 -40~150 Unit V A A °C °C 5DL2C48A, 5FL2C48A Unit: mm JEDEC JEITA TOSHIBA ― ― 12-10D1A Polarity ③ U5DL2C48A, U5FL2C48A ①② JEDEC JEITA TOSHIBA ― ― 12-10D2A 1 2002-08-29 5DL2C48A,5FL2C48A,U5DL2C48A,U5FL2C48A Electrical Characteristics (Ta = 25°C) Characteristics 5DL2C48A Peak forward voltage U5DL2C48A 5FL2C48A U5FL2C48A Repetitive peak reverse current Reverse recovery time Forward recovery time Thermal resistance Symbol Test Condition VFM IFM = 2.5 A IRRM trr tfr Rth (j-c) VRRM = Rated IF = 2 A, di/dt = -20 A/ms IF = 1 A DC total, junction to case Typ. Max Unit ¾ 0.98 V ¾ 1.3 ¾ 10 mA ¾ 35 ns 100 ns ¾ 3.5 °C/W VFM, IRRM, trr, tfr: A Value of one cell. Marking *1 *2 *3 *1 *2 *3 5DL2C 5DL2C48A, U5DL2C48A *1 Mark Type 5FL2C 5FL2...




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