5DL2CZ47A,5FL2CZ47A,5GL2CZ47A
TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE
5DL2CZ47A, 5FL2CZ47A, 5G...
5DL2CZ47A,5FL2CZ47A,5GL2CZ47A
TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE
5DL2CZ47A, 5FL2CZ47A, 5GL2CZ47A
SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION
Unit: mm
z Repetitive Peak Reverse
Voltage : VRRM = 200 V, 300 V, 400V z Average Output Rectified Current : IO = 5 A z Ultra Fast Reverse-Recovery Time : trr = 35 ns (Max) z Low Switching Losses and Output Noise.
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
5DL2CZ47A
200
Repetitive Peak Reverse
Voltage
5FL2CZ47A
VRRM
300
V
5GL2CZ47A
400
Average Output Rectified Current Peak One Cycle Surge Forward Current (Sin Wave)
Junction Temperature Storage Temperature Range Screw Torque
IO
IFSM
Tj Tstg ―
5 25 (50Hz) 27.5 (60Hz) −40~150 −40~150
0.6
A
A
°C °C N·m
JEDEC JEITA TOSHIBA
Weight: 2.0 g
― ― 12−10C1A
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/
voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/
voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTER...