5HB06N8

5HB06N8 MOS H-BRIDGE- 60V HBRIDGE-DRIVE-2NP-Channel Advanced Power MOSFET Summary Device V(BR)DSS N-CH 60V P-CH -60V QG 9.0nC RDS(on) 25mΩ @ VGS= 10V 45mΩ @ VGS= 4.5V 12.7nC 50mΩ @ VGS= -10V 75mΩ @ VGS= -4.5V Description This new generation complementary MOSFET H-Bridge features low on-resistance achievable with low gate drive. Features 2 x N + 2 x P channels in a SOIC package Low voltage (VGS = 4.5 V) gate drive Applications DC Motor control DC-AC Inverters Ordering information Device 5HB06N8 Device marking WFS 5HB06N8 Reel size (inches) 13 Tape width Quantity (mm) per reel 12 2,500 www.maspowersemi.com 1 5HB06N8 H-BRIDGE-MOS 60V HBRIDGE-DRIVE-2NP-Channel Advanced Power MOSFET Absolute maximum ratings Parameter Drain-Source voltage Gate-Source voltage Continuous Drain current @ VGS= 10V; TA=25°C (b) @ VGS= 10V; TA=70°C (b) @ VGS= 10V; TA=25°C (a) @ VGS= 10V; TL=25°C (f) (c) Pulsed Drain current @ VGS= 10V; TA=25°C (b) Continuous Source current (Body diode) at TA =25°C Pulsed Source current (Body diode) at TA =25°C (c) (a) Power dissipation at TA =25°C Linear derating factor (b) Power dissipation at TA =25°C Linear derating factor (f) Power dissipation at TL =25°C Linear derating factor Operating and storage temperature range Symbol V DSS V GS Nchannel 60 ±20 Pchannel -60 ±20 ID 4.98 -4.13 3.98 -3.31 3.98 -3.36 4.17 -3.51 I DM 22.9 -19.6 IS I SM PD PD PD T, T j stg 2.0 -2.0 22.9 -19.6 0.87 6.94 1.35 10.9 0.95 0.98 ...