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5HN02M

N-channel MOS type silicon field effect transistor

5HN02M No. 5HN02M µ µ µ µ   Ω Ω 0.425 10V 0V VIN VIN VDD=25V ID=100mA RL=250Ω 0.15 3 2.1 1.250 0 0.1 PW=10µs...

Sanyo Semicon Device

Description

5HN02M
No.
5HN02M
µ
µ µ µ   Ω Ω
0.425
10V 0V
VIN VIN
VDD=25V ID=100mA RL=250Ω
0.15
3
2.1 1.250 0 0.1
PW=10µs D.C. 1%
D G
VOUT
0.425
5HN02M P.G 50Ω
1 2 0.65 0.65 2.0
0.3 0.9
0.6
S
0.2
0.3
5HN02M
°
Ω
°
Ω
° ° °
Ω
° ° °
Ω
°
°
°
5HN02M
 
°

°
°

° ° °
°
5HN02M
...

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