5N20V

GEMOS www.DataSheet4U.com MOS FIELD EFFECT TRANSISTOR GE5N20V N-CHANNEL MOS FIELD EFFECT TRANSISTOR DESCRIPTION The GE5N20V uses advanced trench technology to provide excellent RDS(ON), rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. This device is suitable for use as a Battery protection or in other Switching application. Schematic diagram GENERAL FEATURES RDS(ON) < 36mΩ @ VGS=2.7V RDS(ON) < 27.5mΩ @ VGS=4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package ● VDS = 20V,ID = 5A Marking and pin Assignment APPLICATIONS ● Battery protection ● Load switch ● Power management TSSOP-8 top view PACKAGE MARKING AND ORDERING INFORMATION Device Marking 5N20V Device GE5N20V Package TSSOP-8 Reel Size Ø330mm Tape width 12mm Quantity 3000 units ABSOLUTE MAXIMUM RATLNGS(TA=25℃unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ Current-Pulsed (Note 1) Symbol VDS VGS ID IDM PD TJ，TSTG Limit 20 ±12 5 20 1.5 -55 to 150 Unit V V A A W ℃ Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 83 ℃/W ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter OFF CHARACTERISTICS Symbol Condition VGS=0V,ID=250µA VDS=18V,VGS=0V VGS=±12V,VDS=0V VDS=VGS,,ID=250µA VGS=4.5V, ID=2.5A VGS=2.7V, ID=2.5A VDS=15V, ID=2.5A Mi...