5N25Z

UNISONIC TECHNOLOGIES CO., LTD 5N25Z Preliminary Power MOSFET 3.8A, 250V N-CHANNEL MOSFET  DESCRIPTION The UTC 5N25Z is an N-Channel enhancement MOSFET, it uses UTC’s advanc ed techn ology to provid e customers with a minimum on-state resistance, hig h s witching spe ed and lo w gate charge. It can also withstand hig h e nergy pu lse i n the avala nche and commutation modes. The UT C 5N25Z is suitable for high efficie ncy s witching D C/DC converter, motor control and switch mode power supply.  FEATURES * RDS(ON)<1.2Ω @ VGS=10V * Low gate charge ( Typ=14nC) * Low CRSS ( Typ=6.0pF) * High switching speed * ESD Capability  SYMBOL  ORDERING INFORMATION Package TO-252 TO-252 Pin Assignment 1 2 3 G D S G D S Packing Tube Tape Reel Ordering Number Lead Free Halogen Free 5N25ZL-TN3-T 5N25ZG-TN3-T 5N25ZL-TN3-R 5N25ZG-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-853.b http://www.Datasheet4U.com 5N25Z  Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise noted) UNIT PARAMETER SYMBOL RATINGS Drain-Source Voltage VDSS 250 V Gate-Source Voltage VGSS ±20 V Continuous I A D 3.8 Drain Current Pulsed (Note 2) IDM 9 A Avalanche Current (Note 2) IAR 3.8 A Single Pulsed (Note 3) EAS 60 mJ Avalanche Energy Repetitive (Note 2) EAR 3.7 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 5.5 V/ns 2.5 W TA=25°C Power Dissipation TC=25°C 37 PD W Derate above 25°C 0.29 W/°C...