5N3011

H5N3011P Silicon N Channel MOS FET High Speed Power Switching Features Low on-resistance Low leakage current High speed switching Outline TO-3P D G S 1 2 3 Absolute Maximum Ratings Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID Note1 (pulse) IDR IDR Note1 (pulse) IAPNote3 EARNote3 Pch Note2 θch-c Tch Tstg REJ03G0385-0200 Rev.2.00 Aug.05.2004 1. Gate 2. Drain (Flange) 3. Source Ratings 300 ±30 88 176 88 176 30 54 150 0.833 150 –55 to +150 (Ta = 25°C) Unit V V A A A A A mJ W °C/W °C °C Rev.2.00, Aug.05.2004, page 1 of 6 H5N3011P Electrical Characteristics Item Symbol Min Drain to Source breakdown voltage V(BR)DSS 300 Zero Gate voltage Drain current IDSS — Gate to Source leak current IGSS — Gate to Source cutoff voltage VGS(off) 3.0 Forward transfer admittance |yfs| 33 Static Drain to Source on state resistance RDS(on) — Input capacitance Ciss — Output capacitance Coss — Reverse transfer capacitance Crss — Turn-on delay time td(on) — Rise time tr — Turn-off delay time td(off) — Fall time tf — Total Gate charge Qg — Gate to Source charge Qgs — Gat...