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5N50C Datasheet

Part Number 5N50C
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel MOSFET
Datasheet 5N50C Datasheet5N50C Datasheet (PDF)

FQD5N50C / FQU5N50C October 2008 QFET ® FQD5N50C / FQU5N50C 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch.

  5N50C   5N50C






Part Number 5N50K-MT
Manufacturers Unisonic Technologies
Logo Unisonic Technologies
Description N-CHANNEL POWER MOSFET
Datasheet 5N50C Datasheet5N50K-MT Datasheet (PDF)

UNISONIC TECHNOLOGIES CO., LTD 5N50K-MT 5A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 5N50K-MT is an N-channel power MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the requirements of the minimum on-state resistance and perfect switching performance. It also can withstand high energy pulse in the avalanche and communication mode. The UTC 5N50K-MT can be used in applications, such as active power fact.

  5N50C   5N50C







Part Number 5N50K
Manufacturers UNISONIC TECHNOLOGIES
Logo UNISONIC TECHNOLOGIES
Description 5A 500V N-CHANNEL MOSFET
Datasheet 5N50C Datasheet5N50K Datasheet (PDF)

UNISONIC TECHNOLOGIES CO., LTD 5N50K 5A, 500V N-CHANNEL POWER MOSFET „ DESCRIPTION 1 Power MOSFET The U TC 5N50K is a n N- channel p ower MOSF ET a dopting UTC’s advanc ed techn ology to provide customers with DMOS, planar stripe techn ology. T his technolo gy i s design ed to meet the requirements of the minim um on- state resistance an d perfec t switching perf ormance. It also can withstand hig h ener gy pulse in the avalanche and communication mode. The U TC 5N50K can b e us ed in a pplica.

  5N50C   5N50C







Part Number 5N50-P
Manufacturers Unisonic Technologies
Logo Unisonic Technologies
Description N-CHANNEL POWER MOSFET
Datasheet 5N50C Datasheet5N50-P Datasheet (PDF)

UNISONIC TECHNOLOGIES CO., LTD 5N50-P 5.0A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 5N50-P is a N-channel power MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the requirements of the minimum on-state resistance and perfect switching performance. It also can withstand high energy pulse in the avalanche and communication mode. The UTC 5N50-P can be used in applications, such as active power factor co.

  5N50C   5N50C







Part Number 5N50
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description TO-220F N-Channel MOSFET
Datasheet 5N50C Datasheet5N50 Datasheet (PDF)

isc N-Channel MOSFET Transistor ·DESCRIPTION ·Drain Current: ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 5 A ID(puls) Pulse Dr.

  5N50C   5N50C







N-Channel MOSFET

FQD5N50C / FQU5N50C October 2008 QFET ® FQD5N50C / FQU5N50C 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. Features • • • • • • • 4.0A, 500V, RDS(on) = 1.4 Ω @VGS = 10 V Low gate charge ( typical 18nC) Low Crss ( typical 15pF) Fast switching 100% avalanche tested Improved dv/dt capability RoHS Compliant D D ! ● ◀ ▲ ● ● G S D-PAK FQD Series I-PAK G D S FQU Series G! ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQD5N50C / FQU5N50C 500 4 2.4 16 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C)* Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range M.


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