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5N65Z Datasheet

Part Number 5N65Z
Manufacturers UNISONIC TECHNOLOGIES
Logo UNISONIC TECHNOLOGIES
Description 5A 650V N-CHANNEL POWER MOSFET
Datasheet 5N65Z Datasheet5N65Z Datasheet (PDF)

UNISONIC TECHNOLOGIES CO., LTD 5N65Z Preliminary Power MOSFET 5A, 650V N-CHANNEL POWER MOSFET „ DE SCRIPTION The UTC 5N65Z is a high voltage po wer MOSFET designed to have better characteristics, such as f ast s witching time, lo w gate charge, low on-state resistance and high rugged avalanche characteristics. This po wer MOSF ET is u sually us ed in hig h speed s witching app lications at po wer su pplies, PW M motor controls, high efficient DC to DC converters and bridge circuits. „ FEAT U.

  5N65Z   5N65Z






Part Number 5N65K-MTQ
Manufacturers UTC
Logo UTC
Description N-CHANNEL POWER MOSFET
Datasheet 5N65Z Datasheet5N65K-MTQ Datasheet (PDF)

UNISONIC TECHNOLOGIES CO., LTD 5N65K-MTQ 5A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 5N65K-MTQ is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications at power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.  FEATURES * RDS(ON) < 2.2Ω @ VGS = 10 V, ID.

  5N65Z   5N65Z







Part Number 5N65K-MK
Manufacturers UTC
Logo UTC
Description N-CHANNEL MOSFET
Datasheet 5N65Z Datasheet5N65K-MK Datasheet (PDF)

UNISONIC TECHNOLOGIES CO., LTD 5N65K-MT 5A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 5N65K-MT is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications at power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.  FEATURES * RDS(ON) < 2.4Ω @VGS = 10 V, ID = .

  5N65Z   5N65Z







Part Number 5N65K
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description N-Channel MOSFET Transistor
Datasheet 5N65Z Datasheet5N65K Datasheet (PDF)

isc N-Channel MOSFET Transistor 5N65K FEATURES ·Drain Current : ID= 5.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.4Ω(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Volta.

  5N65Z   5N65Z







Part Number 5N65K
Manufacturers UNISONIC TECHNOLOGIES
Logo UNISONIC TECHNOLOGIES
Description 5A 650V N-CHANNEL POWER MOSFET
Datasheet 5N65Z Datasheet5N65K Datasheet (PDF)

UNISONIC TECHNOLOGIES CO., LTD 5N65K 5A, 650V N-CHANNEL POWER MOSFET „ DE SCRIPTION 1 Power MOSFET The U TC 5N65K is a high voltag e po wer MOSF ET designe d to have b etter ch aracteristics, s uch as fast s witching time, low g ate charge, lo w on-state resis tance an d hi gh rugg ed a valanche characteristics. T his po wer M OSFET is usu ally used in high sp eed switching app lications at po wer suppli es, PWM motor controls, high efficient DC to DC converters and bridge circuits. TO-220F .

  5N65Z   5N65Z







5A 650V N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 5N65Z Preliminary Power MOSFET 5A, 650V N-CHANNEL POWER MOSFET „ DE SCRIPTION The UTC 5N65Z is a high voltage po wer MOSFET designed to have better characteristics, such as f ast s witching time, lo w gate charge, low on-state resistance and high rugged avalanche characteristics. This po wer MOSF ET is u sually us ed in hig h speed s witching app lications at po wer su pplies, PW M motor controls, high efficient DC to DC converters and bridge circuits. „ FEAT URES * RDS(ON) = 2.4Ω @VGS = 10 V * Ultra Low Gate Charge ( Typical 15 nC ) * Low Reverse Transfer Capacitance ( CRSS = Typical 6.5 pF ) * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness „ SYMBOL „ ORDERING INFORMATION Package TO-220F1 Pin Assignment 1 2 3 G D S Packing Tube Ordering Number Lead Free Halogen Free 5N65ZL-TF1-T 5N65ZG-TF1-T Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-910.a http://www.Datasheet4U.com 5N65Z „ Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±20 V Avalanche Current (Note 2) IAR 5 A Continuous Drain Current ID 5 A Pulsed Drain Current (Note 2) IDM 20 A Single Pulsed (Note 3) EAS 210 Avalanche Energy mJ Repetitive (Note 2) EAR 10 Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns Power.


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