isc N-Channel MOSFET Transistor
5N80
·DESCRIPTION ·Drain Current ID= 5.5A@ TC=25℃ ·Drain Source Voltage
: VDSS= 800V(M...
isc N-Channel
MOSFET Transistor
5N80
·DESCRIPTION ·Drain Current ID= 5.5A@ TC=25℃ ·Drain Source
Voltage
: VDSS= 800V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
.
·Designed for high current, high speed switching, switch mode power supplies (SMPS), consumer and industrial lighting, DC-AC inverters for welding equipment and uninterruptible power supply(UPS)
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
ARAMETER
VALUE UNIT
VDSS
Drain-Source
Voltage (VGS=0)
800
V
VGS
Gate-Source
Voltage
±30
V
ID
Drain Current-continuous@ TC=25℃
5.5
A
ID(puls)
Pulse Drain Current
20
A
Ptot
Total Dissipation@TC=25℃
125
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
1
℃/W
Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc N-Channel
MOSFET Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown
Voltage
VGS= 0; ID= 250µA
VGS(th) Gate Threshold
Voltage
VDS= VGS; ID=250µA
VSD
Diode Forward On-
Voltage
IS=5.5A ;VGS= 0
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID=2.5A
IGSS
Gate-Body Leakage Current
VGS= ±30V;VDS= 0
IDSS
Zero Gate
Voltage Drain Current
VDS= 800V; VGS= 0
5N80
MIN TYPE MAX UNIT
800
V
2...