5SDA10D2003

www.DataSheet4U.com Key Parameters VRRM = 2300 IFAVM = 1140 IFSM = 13.5 VF0 = 0.83 rF = 0.30 V A kA V mΩ Avalanche Rectifier Diode 5SDA 10D2303 Doc. No. 5SYA 1120 - 01 Apr-98 Features Optimized for line frequency rectifiers Low on-state voltage, narrow VF-bands for parallel operation Self protected against transient overvoltages Guaranteed maximum avalanche power dissipation Industry standard housing Blocking Part number VRRM VRSM IRRM PRSM 5SDA 10D2303 2300 2530 ≤ ≤ ≤ 5SDA 10D2003 2000 2200 50 70 50 mA kW kW 5SDA 10D1703 Condition 1700 1870 f tP tP tP = 50 Hz = 10 ms = 20 µs = 20 µs tP Tj Tj Tj Tj = 10 ms = 160°C = 160°C = 45°C = 160°C VRRM Mechanical data FM a Mounting force min. max. Acceleration Device unclamped Device clamped Weight Surface creepage distance Air strike distance 10 kN 12 kN 50 m/s 2 200 m/s 0.25 kg 30 mm 20.5 mm 2 m DS Da ABB Semiconductors AG www.DataSheet4U.com ABB Semiconductors AG 5SDA 10D2303 On-state IFAVM IFRMS IFSM It VF0 rF VF min VF max 2 Max. average on-state current Max. RMS on-state current Max. peak non-repetitive surge current Limiting load integral Threshold voltage Slope resistance On-state voltage On-state voltage 1140 A 1790 A 13.5 kA 14.5 kA 910⋅103 A s 2 2 Half sine wave, TC = 85°C tp tp tp tp IF IF = = = = 10 ms 8.3 ms 10 ms 8.3 ms Tj = Tj = 160°C 25°C Tj = 160°C After surge: VR ≈ 0V 875⋅10 A s 3 0.83 V 0.30 mΩ 1.20 V 1.35 V = 1000 - 3000 A = 1800 A Thermal Tj RthJC Storage and operating junction temper...