5SDD31K6000

 High Voltage Diode Properties  Industry standard housing  Suitable for parallel operation  High operating temperature  Low forward voltage drop  Explosive protection Applications  Rectifier bridges 5SDD 31K6000 5SDD 31K6000 Old part no. DV 889B-3100-60 Key Parameters VRRM = 6 000 V IFAVm = 3 052 A IFSM = 40 000 A VTO = 0.944 V rT = 0.166 m Types 5SDD 31K6000 Conditions: VRRM 6 000 V Tj = -40 ÷ 150 °C, half sine waveform, f = 50 Hz Mechanical Data Fm Mounting force m Weight 50 ± 5 kN 1.2 kg DS Surface creepage distance 49 mm Da Air strike distance 28 mm  ABB s.r.o. Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic tel.: +420 261 306 250, http://www.abb.com/semiconductors TS - DV/258/07b Oct-15 Fig. 1 Case 1 of 5 5SDD 31K6000 Maximum Ratings VRRM Repetitive peak reverse voltage Tj = -40 ÷ 150 °C IFAVm Average forward current Tc = 85 °C IFRMS RMS forward current Tc = 85 °C IRRM Repetitive reverse current VR = VRRM I...