5SDD33L5500

VRSM IF(AV)M IF(RMS) IFSM VF0 rF = = = = = = 5500 3480 5470 46×103 0.94 0.147 V A A A V mΩ Rectifier Diode 5SDD 33L5500 Doc. No. 5SYA1168-00 March 05 Patented free-floating silicon technology Very low on-state losses Optimum www.DataSheet4U.com power handling capability Blocking Maximum rated values 1) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage Characteristic values Symbol Conditions VRRM VRSM f = 50 Hz, tp = 10ms, Tj = 0...150°C f = 5 Hz, tp = 10ms, Tj = 0...150°C Value 5000 5500 Unit V V Parameter Max. (reverse) leakage current Symbol Conditions IRRM VRRM, Tj = 150°C min typ max 400 Unit mA Mechanical data Maximum rated values 1) Parameter Mounting force Acceleration Acceleration Characteristic values Symbol Conditions FM a a Device unclamped Device clamped min 63 typ 70 max 77 50 100 Unit kN m/s m/s 2 2 Parameter Weight Housing thickness Surface creepage distance Symbol Conditions m H DS FM = 70 kN, Ta = 25 °C min 26.0 35 typ max 1.45 26.6 Unit kg mm mm mm Air strike distance Da 14 1) Maximum rated values indicate limits beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SDD 33L5500 On-state Maximum rated values 1) Parameter Max. average on-state current Max. RMS on-state current Max. peak non-repetitive surge current Limiting load integral Max. peak non-repetitive surge current Limiting load integral www.Data...