5SDD38H5000

VRSM IF(AV)M IF(RMS) IFSM VF0 rF = = = = = = 5000 3810 5990 45×103 0.903 0.136 V A A A V mΩ Rectifier Diode 5SDD 38H5000 Doc. No. 5SYA1177-00 Feb. 06 Optimum power handling capability Very low on-state losses www.DataSheet4U.com Blocking Maximum rated values Note 1 Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage Characteristic values Symbol Conditions VRRM VRSM f = 50 Hz, tp = 10ms, Tj = -40...160°C f = 50 Hz, tp = 10ms, Tj = -40...160°C min typ Value 5000 5000 max 110 Unit V V Unit mA Parameter Max. (reverse) leakage current Symbol Conditions IRRM VRRM, Tj = 160°C Derating factor of 0.13% per °C is applicable for Tj below 0 °C. Mechanical data Maximum rated values Note 1 Parameter Mounting force Acceleration Acceleration Characteristic values Symbol Conditions FM a a Device unclamped Device clamped min 45 typ 50 max 55 50 100 Unit kN m/s m/s 2 2 Parameter Weight Housing thickness Surface creepage distance Air strike distance Symbol Conditions m H DS Da FM = 50 kN, Ta = 25 °C min 25.5 40 20 typ 0.9 max 26.5 Unit kg mm mm mm Note 1 Maximum rated values indicate limits beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SDD 38H5000 On-state Maximum rated values Note 1 Parameter Max. average on-state current Max. RMS on-state current Max. peak non-repetitive surge current Limiting load integral Max. peak non-repetitive surge c...