VDRM ITGQM ITSM V(T0) rT VDC-link
= = = = = =
4500 4000 32×103 1.4 0.325 2800
V A A V mΩ V
Asymmetric Integrated Gat...
VDRM ITGQM ITSM V(T0) rT VDC-link
= = = = = =
4500 4000 32×103 1.4 0.325 2800
V A A V mΩ V
Asymmetric Integrated GateCommutated Thyristor
5SHY 35L4510
Doc. No. 5SYA1232-02 June 07
High snubberless turn-off rating Optimized for medium frequency (<1 kHz) and wide temperature range High reliability High electromagnetic immunity Simple control interface with status feedback AC or DC supply
voltage Contact factory for series connection
www.DataSheet4U.com
Blocking
Maximum rated values
1)
Parameter Symbol Conditions Rep. peak off-state
voltage VDRM Gate Unit energized Permanent DC
voltage for VDC-link 100 FIT failure rate of GCT Reverse
voltage
Characteristic values
min
typ
max 4500 2800 17 10
Unit V V V V Unit mA
Ambient cosmic radiation at sea level in open air. Gate Unit energized IGCT in off-state on-state
VRRM
Parameter Symbol Conditions Rep. peak off-state current IDRM VD = VDRM, Gate Unit energized
min
typ
max 50
Mechanical data (see Fig. 11, 12) 1)
Maximum rated values
Parameter Mounting force
Characteristic values
Symbol Conditions Fm Symbol Conditions Dp ± 0.1 mm H m Ds Da l h Anode to Gate Anode to Gate ± 1.0 mm ± 1.0 mm
min 36 min 25.3 33 10
typ 40 typ 85
max 44 max 25.8 2.9
Unit kN Unit mm mm kg mm mm
Parameter Pole-piece diameter Housing thickness Weight Surface creepage distance Air strike distance Length Height
439 40 173
mm mm mm
Width IGCT w ± 1.0 mm 1) Maximum rated values indicate limits beyond which damage to the dev...