5SHY35L4512 Datasheet





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5SHY35L4512 Datasheet - Asymmetric Integrated Gate- Commutated Thyristor

5SHY35L4512   5SHY35L4512  

Datasheet: 5SHY35L4512 datasheet

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Description: VDRM ITGQM ITSM V(T0) rT VDC-link = = = = = = 4500 4000 35×103 1.15 0.21 280 0 V A A V mΩ V Asymmetric Integrate d GateCommutated Thyristor 5SHY 35L451 2 Doc. No. 5SYA1233-02 June 07 • Low est on state voltage (2V @ 4000A) • O ptimized for low frequency (<100 Hz) an d wide temperature range • High relia bility • High electromagnetic immunit y • Simple control interface with sta tus feedback • AC or DC supply voltag e • Contact factory for series connec tion www.DataSheet4U.com Blocking Max imum rated values 1) Parameter Symbol Conditions Rep. peak off-state voltage VDRM Gate Unit energized Permanent DC voltage for VDC-link 100 FIT failure ra te of GCT Reverse voltage Characteristic values min


Manufacture Part Number Description

ABB

5SHY35L4512

Asymmetric Integrated Gate- Commutated Thyristor




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