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5STR10T2520

ABB

Reverse Conducting Thyristor

5STR 10T2520 5STR 10T2520 Old part no. TP 919FC-1000-25 Reverse Conducting Thyristor Properties Amplifying gate Integr...


ABB

5STR10T2520

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5STR 10T2520 5STR 10T2520 Old part no. TP 919FC-1000-25 Reverse Conducting Thyristor Properties Amplifying gate Integrated freewheeling diode Optimized for low dynamic losses Applications Traction Key Parameters VDRM = 2 500 ITAVm = 857 ITSM = 14 000 VTO = 2.039 rT = 0.321 tq = 20 V A A V m µs Types VDRM 5STR 10T2520 2 500 V Conditions: Tj = -40 ÷ 125 °C, half sine waveform, f = 50 Hz, note 1 Mechanical Data Fm Mounting force m Weight DS Surface creepage d stance Da Air strike di tance 30 ± 3 kN 0.700 kg 30.4 mm 13.2 mm ABB s.r.o. Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic tel.: +420 261 306 250, http://www.abb.com/semiconductors TS - TP/241/07a Aug-11 Fig. 1 Case 1 of 13 5STR 10T2520 Maximum Ratings - Thyristor Maximum Limits VDRM Repetitive peak off-state voltage Tj = -40 ÷ 125 °C, note 1 2 500 ITRMS ITAVm RMS on-state current Tc = 70 °C, half sine waveform, f = 50 Hz Average on-state current Tc = 70 °C, half sine waveform, f = 50 Hz 1 347 857...




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