60N035

Bay Linear Linear Excellence N-Channel Field Effect Transistor 60N035 Advance Information Description The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for low voltage applications such as automotive and other battery powered circuits where fast switching, low in-line power loss and resistance to transistors are needed. The TO-220 is offered in a 3-pin is universally preferred for all commercial-industrial applications at power dissipation level to approximately to 50 watts. Also, available in a D2 surface mount power package with a power dissipation up to 2 Watts Features Critical DC Electrical parameters specified at elevated Temp. Rugged internal source-drain diode can eliminate the need for external Zener diode transient suppresser Super high density cell design for extremely low RDS(ON) VDSS = 30V RDS (ON) = 0.015 Ω ID = 60A Ordering Information Device 60N035T 60N035S Package TO-220 TO-263 ( D2 ) Temp. 0 to 150°C 0 to 150°C Absolute Maximum Rating Symbol ID Parameter Drain Current Continues Pulsed Drain-Source Voltage Gate Source Voltage Total Power Dissipation @ TC =25°C Derate above 25°C Operating and Storage Temperature Range Max 60 180 30 ±20 50 0.4 -65 to 175 Unit A V V W W/°C °C VDSS VGSV PD TJ TSTG Bay Linear, Inc 2478 Armstrong Street, Livermore, CA 94550 Tel: (925) 989-7144, Fax: (925) 940-9556 www.baylinear.com 60N035 Electrical Characteristi...