STB60N03L-10
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
PRELIMIRARY DATA TYPE STB60N03L-10
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s s s s s s s s
V DSS 30 V
R DS(on) < 0.01 Ω
ID 60 A
s
s
TYPICAL RDS(on) = 0.0085 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175 oC OPERATING TEMPERATUR...
