60N05

isc N-Channel MOSFET Transistor INCHANGE Semiconductor 60N05 ·DESCRIPTION ·Drain Current ID= 60A@ TC=25℃ ·Static Drain-Source On-Resistance : RDS(on) = 18mΩ(Max) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·General purpose power amplifier High current,high speed switching Solenoid and relay drivers ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 50 V VGS Gate-Source Voltage ±20 V Drain Current-continuous@ TC=25℃ 60 ID A Drain Current-continuous@ TC=100℃ 38．9 ID(puls) Pulse Drain Current 200 A Ptot Total Dissipation@TC=25℃ 150 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range ·THERMAL CHARACTERISTICS SYMBOL PARAMETER -55~150 ℃ MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.0 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) INCHANGE Semiconductor 60N05 SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT VDSS Drain-Source Breakdown Voltage VGS= 0; ID= 250µA 50 V VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA 2.0 4.0 V VSD Diode Forward On-Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IS=60A ;VGS= 0 VGS= 10V; ID=20A VGS= 4.5V; ID=15A VGS= ±20V;VDS= 0 1.6 V 14 mΩ 18 ±100 nA IDSS Zero...