STD60N3LH5 STP60N3LH5, STU60N3LH5
N-channel 30 V, 0.0072 Ω, 48 A DPAK, IPAK, TO-220 STripFET™ V Power MOSFET
Features
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STD60N3LH5 STP60N3LH5, STU60N3LH5
N-channel 30 V, 0.0072 Ω, 48 A DPAK, IPAK, TO-220 STripFET™ V Power
MOSFET
Features
Type STD60N3LH5 STP60N3LH5 STU60N3LH5
VDSS 30 V 30 V 30 V
RDS(on) max 0.008 Ω 0.0084 Ω 0.0084 Ω
ID 48 A 48 A 48 A
■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ Very low switching gate charge ■ High avalanche ruggedness ■ Low gate drive power losses
Application
■ Switching applications
Description
This STripFET™V Power
MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class FOM.
3 2 1
TO-220
3 1
DPAK
3 2 1
IPAK
Figure 1. Internal schematic diagram
Table 1. Device summary Order codes STD60N3LH5 STP60N3LH5 STU60N3LH5
Marking 60N3LH5 60N3LH5 60N3LH5
Package DPAK TO-220 IPAK
Packaging Tape and reel
Tube Tube
April 2009
Doc ID 14079 Rev 3
1/16
www.st.com
16
Contents
Contents
STD60N3LH5, STP60N3LH5, STU60N3LH5
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
