Ultra-Low VCE(sat) IGBT
IXGN 60N60
VCES = 600 V
IC25 = 100 A VCE(sat) = 1.7 V
Preliminary data sheet
Symbol
Test Co...
Ultra-Low VCE(sat) IGBT
IXGN 60N60
VCES = 600 V
IC25 = 100 A VCE(sat) = 1.7 V
Preliminary data sheet
Symbol
Test Conditions
VCES V
CGR
VGES VGEM
I
C25
IC90 I
CM
SSOA (RBSOA)
TJ = 25°C to 150°C
T J
=
25°C
to
150°C;
R GE
=
1
MW
Continuous
Transient
T C
= 25°C
TC = 90°C
T C
= 25°C, 1 ms
VGE= 15 V, TVJ = 125°C, RG = 10 W Clamped inductive load, L = 30 mH
PC
TC = 25°C
TJ T
JM
Tstg
M
Mounting torque
d
Terminal connection torque (M4)
Weight
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
E
Maximum Ratings
600
V
600
V
±20
V
±30
V
100
A
60
A
200
A
ICM = 100
A
@ 0.8 V
CES
250
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in.
30
g
300
°C
SOT-227B miniBLOC
Ex G
Ex C
G = Gate, C = Collector, E = Emitter x Either emitter terminal can be used
as Main or Kelvin Emitter
Features
q International standard package SOT-227B
q Aluminium nitride isolation - high power dissipation
q Isolation
voltage 3000 V~ q Very high current, fast switching
IGBT q Low V for minimum on-state
CE(sat)
conduction losses q MOS Gate turn-on drive simplicity q Low collector-to-case capacitance
(< 50 pF) q Low package inductance (< 5 nH)
- easy to drive and to protect
Symbol
BV CES
VGE(th) ICES
IGES VCE(sat)
Test Conditions
I
C
=
250
mA,
V GE
=
0
V
IC = 250 mA, VCE = VGE
VCE = 0.8 VCES VGE = 0 V
VCE = 0 V, VGE = ±20 V
IC = IC90, VGE = 15 V
Characteristic Values
(TJ = 25°C, unless other...
