MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS E6
600V CoolMOS™ E6 Power Transistor IPx60R190E6
Data Sheet
Rev. 2.0, 2010-05-03 Final
In d u s tr ia l & M u l ti m a r k e t
600V CoolMOS™ E6 Power Transistor
IPP60R190E6, IPA60R190E6 IPW60R190E6
1
Description
CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS ™ E6 series combines the experience of th.
IPA60R190E6
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS E6
600V CoolMOS™ E6 Power Transistor IPx60R190E6
Data Sheet
Rev. 2.0, 2010-05-03 Final
In d u s tr ia l & M u l ti m a r k e t
600V CoolMOS™ E6 Power Transistor
IPP60R190E6, IPA60R190E6 IPW60R190E6
1
Description
CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS ™ E6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler. Features • • • • Extremely low losses due to very low FOM R dson*Qg and Eoss Very high commutation ruggedness Easy to use/drive JEDEC1) qualified, Pb-free plating, Halogen free
drain pin 2
gate pin 1
Applications PFC stages, hard switching PWM stages and resonant switching PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS. Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. Table 1 Parameter Key Performance Parameters Value 650 0.19 63 59 5.2 500 Package PG-TO247 PG-TO220 PG-TO220 FullPAK 6R190E6 Unit V ! nC A µJ A/µs Marking Related Links
source pin 3
VDS @ Tj,max
R DS(on),max
Qg,ty.