CMOS Static RAM 16K (4K x 4-Bit)
Features
IDT6168SA IDT6168LA
High-speed (equal access and cycle time) – Military: 25/45ns (max.) – Industrial: 25ns (max.) – Commercial: 15/20/25ns (max.) x Low power consumption x Battery backup operation—2V data retention voltage www.DataSheet4U.com (IDT6168LA only) x Available in high-density 20-pin ceramic or plastic DIP and 20-pin leadless chip carrier (LCC) x Produced with advanced CMOS high-performance technology x CMOS process virtually eliminates alpha.
IDT6168LA70DB
CMOS Static RAM 16K (4K x 4-Bit)
Features
IDT6168SA IDT6168LA
High-speed (equal access and cycle time) – Military: 25/45ns (max.) – Industrial: 25ns (max.) – Commercial: 15/20/25ns (max.) x Low power consumption x Battery backup operation—2V data retention voltage www.DataSheet4U.com (IDT6168LA only) x Available in high-density 20-pin ceramic or plastic DIP and 20-pin leadless chip carrier (LCC) x Produced with advanced CMOS high-performance technology x CMOS process virtually eliminates alpha particle soft-error rates x Bidirectional data input and output x Military product compliant to MIL-STD-883, Class B
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Description
The IDT6168 is a 16,384-bit high-speed static RAM organized as 4K x 4. It is fabricated using lDT’s high-performance, high-reliability
CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective approach for high-speed memory applications. Access times as fast 15ns are available. The circuit also offers a reduced power standby mode. When CS goes HIGH, the circuit will automatically go to, and remain in, a standby mode as long as CS remains HIGH. This capability provides significant system-level power and cooling savings. The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1µW operating off a 2V battery. All inputs and outputs of the IDT6168 are TTL-compatible and operate from a single 5V supply. The IDT6168 is pack.