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630A

GFD

MOSFET

GOFORD Description Features VDSS RDS(ON) @ 10V (typ) 200V 0.21Ω ID 9A • Fast switching • 100% avalanche tested • Imp...


GFD

630A

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Description
GOFORD Description Features VDSS RDS(ON) @ 10V (typ) 200V 0.21Ω ID 9A Fast switching 100% avalanche tested Improved dv/dt capability Application DC Motor Control and Class D Amplifier Uninterruptible Power Supply (UPS) Automotive 630A TO-252 TO-251 Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter VDSS Drain-Source Voltage VGSS ID IDM EAS dv/dt Gate-Source Voltage Continuous Drain Current Pulsed Drain Current note1 Single Pulsed Avalanche Energy note2 Peak Diode Recovery Energy note3 TC = 25℃ TC = 100℃ Power Dissipation PD Linear Derating Factor TC = 25℃ TC > 25℃ RθJC Thermal Resistance, Junction to Case TJ, TSTG Operating and Storage Temperature Range *Drain current limited by maximum junction temperature Max. TO-251/TO-252 200 ± 30 9 5.83 36 320 5 83 0.67 1.5 -55 to +150 Units V V A A A mJ V/ns W W/℃ ℃/W ℃ HTTP://www.gofordsemi.com TEL:0755-29961262 FAX:0755-29961466 Page 1 GOFORD 630...




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